FQB7N10TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

29.2A

Pin Count :

3

Number of Elements :

1

DS Breakdown Voltage-Min :

100V

Terminal Position :

Single

Vgs (Max) :

±25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.35Ohm

Drain Current-Max (Abs) (ID) :

7.3A

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Surface Mount :

yes

Power Dissipation-Max :

3.75W Ta 40W Tc

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

50 mJ

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

350m Ω @ 3.65A, 10V

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

QFET®

FET Type :

N-Channel

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

260