FQB7P06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

DS Breakdown Voltage-Min :

60V

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

7A

Terminal Form :

Gull wing

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 25V

Power Dissipation-Max :

3.75W Ta 45W Tc

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

28A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

410m Ω @ 3.5A, 10V

Transistor Element Material :

SILICON

Number of Elements :

1

Surface Mount :

yes

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.41Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

60V

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

90 mJ