FQB7P06TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

410m Ω @ 3.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Terminal Form :

Gull wing

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±25V

Drain-source On Resistance-Max :

0.41Ohm

Mounting Type :

Surface Mount

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

60V

Power Dissipation-Max :

3.75W Ta 45W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 25V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

28A

Drain Current-Max (Abs) (ID) :

7A

Case Connection :

DRAIN

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

90 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE