FQB4N80TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Resistance :

3.6Ohm

Power Dissipation-Max :

3.13W Ta 130W Tc

Threshold Voltage :

5V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

460 mJ

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Weight :

1.31247g

Transistor Application :

SWITCHING

Voltage - Rated DC :

800V

Fall Time (Typ) :

35 ns

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

30V

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

800V

Factory Lead Time :

10 Weeks

Published :

2000

Height :

4.83mm

Lead Free :

Lead Free

Turn-Off Delay Time :

35 ns

Rise Time :

45ns

Number of Terminations :

2

Case Connection :

DRAIN

JESD-609 Code :

e3

Continuous Drain Current (ID) :

3.9A

Current Rating :

3.9A

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Radiation Hardening :

No

Number of Pins :

3

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.95A, 10V

Vgs (Max) :

±30V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

ECCN Code :

EAR99

Pbfree Code :

yes

Turn On Delay Time :

16 ns

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

3.13W

Mount :

Surface Mount

Series :

QFET®

RoHS Status :

ROHS3 Compliant