FQB4N20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

14.4A

Avalanche Energy Rating (Eas) :

52 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

3.13W Ta 45W Tc

Pbfree Code :

yes

Terminal Position :

Single

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Pin Count :

3

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Surface Mount :

yes

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

QFET®

Drain Current-Max (Abs) (ID) :

3.6A

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

200V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 10V

Reach Compliance Code :

Unknown

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.8A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Voltage (Vdss) :

200V

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 25V