FQB45N15V2TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

150V

Terminal Form :

Gull wing

Number of Elements :

1

FET Type :

N-Channel

Pin Count :

3

Terminal Position :

Single

Number of Terminations :

2

Terminal Finish :

MATTE TIN

Vgs (Max) :

±30V

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

1124 mJ

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

150V

Drain Current-Max (Abs) (ID) :

45A

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

QFET®

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

40m Ω @ 22.5A, 10V

Drain-source On Resistance-Max :

0.04Ohm

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3.03pF @ 25V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

180A