FQB47P06TM-AM002

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Pulsed Drain Current-Max (IDM) :

188A

Mounting Type :

Surface Mount

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

47A

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Drain-source On Resistance-Max :

0.026ohm

DS Breakdown Voltage-Min :

60V

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

not_compliant

Published :

2013

Number of Terminations :

2

Factory Lead Time :

7 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

47A Tc

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

820 mJ

Series :

QFET®

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

26m Ω @ 23.5A, 10V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Pbfree Code :

yes

Power Dissipation-Max :

3.75W Ta 160W Tc

Vgs (Max) :

±25V

JESD-609 Code :

e3