FQB44N10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

100 ns

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Voltage - Rated DC :

100V

Power Dissipation :

3.75W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Mount :

Surface Mount

Pbfree Code :

yes

Height :

4.83mm

Vgs (Max) :

±25V

Rds On (Max) @ Id, Vgs :

39m Ω @ 21.75A, 10V

Case Connection :

DRAIN

Number of Pins :

3

Power Dissipation-Max :

3.75W Ta 146W Tc

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

JESD-609 Code :

e3

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

43.5A Tc

Terminal Finish :

Tin (Sn)

Published :

2000

Weight :

1.31247g

Current Rating :

43.5A

Turn On Delay Time :

19 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Length :

10.67mm

Operating Temperature :

-55°C~175°C TJ

Width :

9.65mm

Rise Time :

190ns

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Series :

QFET®

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Turn-Off Delay Time :

90 ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

43.5A

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

25V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V