FQB4N80TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

45ns

JESD-609 Code :

e3

Pbfree Code :

yes

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Height :

4.83mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

3.9A

FET Type :

N-Channel

Contact Plating :

Tin

Published :

2000

Fall Time (Typ) :

35 ns

Current Rating :

3.9A

Threshold Voltage :

5V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Voltage - Rated DC :

800V

JESD-30 Code :

R-PSSO-G2

Series :

QFET®

ECCN Code :

EAR99

Element Configuration :

Single

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

460 mJ

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Resistance :

3.6Ohm

Power Dissipation-Max :

3.13W Ta 130W Tc

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Turn On Delay Time :

16 ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.95A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

800V

Vgs(th) (Max) @ Id :

5V @ 250μA

Weight :

1.31247g

Number of Elements :

1

Power Dissipation :

3.13W

Turn-Off Delay Time :

35 ns

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

Number of Pins :

3

REACH SVHC :

No SVHC