FQB2P40TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

400V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

2A

Transistor Application :

SWITCHING

Number of Elements :

1

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Pulsed Drain Current-Max (IDM) :

8A

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

6.5 Ω @ 1A, 10V

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

3.13W Ta 63W Tc

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

400V

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

120 mJ

Terminal Position :

Single

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V