FQB25N33TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

230m Ω @ 12.5A, 10V

Pulsed Drain Current-Max (IDM) :

100A

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

Non-RoHS Compliant

Qualification Status :

COMMERCIAL

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

2.01pF @ 25V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Additional Feature :

FAST SWITCHING

Mounting Type :

Surface Mount

Number of Terminations :

2

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

330V

Drain Current-Max (Abs) (ID) :

25A

Power Dissipation-Max :

3.1W Ta 250W Tc

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

330V

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

370 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 15V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Series :

QFET®

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.23Ohm