FQB22P10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Element Configuration :

Single

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

30V

Width :

9.65mm

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Power Dissipation-Max :

3.75W Ta 125W Tc

Height :

4.83mm

Transistor Application :

SWITCHING

Dual Supply Voltage :

100V

Rds On (Max) @ Id, Vgs :

125m Ω @ 11A, 10V

Resistance :

125mOhm

Contact Plating :

Tin

Turn On Delay Time :

17 ns

Pulsed Drain Current-Max (IDM) :

88A

ECCN Code :

EAR99

Pbfree Code :

yes

Mounting Type :

Surface Mount

Turn-Off Delay Time :

60 ns

Number of Pins :

3

Current Rating :

-22A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Terminal Form :

Gull wing

Number of Elements :

1

Weight :

1.31247g

Rise Time :

170ns

Continuous Drain Current (ID) :

-22A

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

REACH SVHC :

No SVHC

Factory Lead Time :

4 Weeks

Power Dissipation :

125W

Length :

10.67mm

FET Type :

P-Channel

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-100V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Published :

2002

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Fall Time (Typ) :

110 ns

Threshold Voltage :

-4V

Termination :

SMD/SMT

Drain to Source Breakdown Voltage :

-100V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB