FQB22P10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

4.83mm

Rds On (Max) @ Id, Vgs :

125m Ω @ 11A, 10V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±30V

Power Dissipation :

125W

Pbfree Code :

yes

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Case Connection :

DRAIN

Radiation Hardening :

No

Power Dissipation-Max :

3.75W Ta 125W Tc

Turn On Delay Time :

17 ns

Current Rating :

-22A

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Number of Elements :

1

FET Type :

P-Channel

Threshold Voltage :

-4V

Fall Time (Typ) :

110 ns

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Width :

9.65mm

Voltage - Rated DC :

-100V

Pulsed Drain Current-Max (IDM) :

88A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

1.31247g

Number of Pins :

3

Published :

2002

Factory Lead Time :

4 Weeks

Number of Terminations :

2

Dual Supply Voltage :

100V

Drain to Source Breakdown Voltage :

-100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Continuous Drain Current (ID) :

-22A

Rise Time :

170ns

Length :

10.67mm

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Resistance :

125mOhm

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Turn-Off Delay Time :

60 ns

Gate to Source Voltage (Vgs) :

30V