FQB22P10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.75W Ta 125W Tc

Drain to Source Breakdown Voltage :

-100V

Continuous Drain Current (ID) :

-22A

Turn-Off Delay Time :

60 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

9.65mm

Power Dissipation :

125W

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

Termination :

SMD/SMT

Element Configuration :

Single

Number of Terminations :

2

Lead Free :

Lead Free

Series :

QFET®

Operating Temperature :

-55°C~175°C TJ

Published :

2002

Vgs (Max) :

±30V

Resistance :

125mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Length :

10.67mm

Current Rating :

-22A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Height :

4.83mm

Pbfree Code :

yes

Threshold Voltage :

-4V

Turn On Delay Time :

17 ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Dual Supply Voltage :

100V

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

FET Type :

P-Channel

Number of Elements :

1

Rise Time :

170ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

88A

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Weight :

1.31247g

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Case Connection :

DRAIN

Voltage - Rated DC :

-100V

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Terminal Form :

Gull wing

Fall Time (Typ) :

110 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

125m Ω @ 11A, 10V