FQB22P10TM
- Mfr.Part #
- FQB22P10TM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 22A D2PAK
- Stock
- 12,687
- In Stock :
- 12,687
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Height :
- 4.83mm
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 11A, 10V
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 125W
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 3.75W Ta 125W Tc
- Turn On Delay Time :
- 17 ns
- Current Rating :
- -22A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 25V
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- FET Type :
- P-Channel
- Threshold Voltage :
- -4V
- Fall Time (Typ) :
- 110 ns
- Series :
- QFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 9.65mm
- Voltage - Rated DC :
- -100V
- Pulsed Drain Current-Max (IDM) :
- 88A
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 1.31247g
- Number of Pins :
- 3
- Published :
- 2002
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 2
- Dual Supply Voltage :
- 100V
- Drain to Source Breakdown Voltage :
- -100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- -22A
- Rise Time :
- 170ns
- Length :
- 10.67mm
- Lifecycle Status :
- ACTIVE (Last Updated: 18 hours ago)
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Resistance :
- 125mOhm
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 60 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- FQB22P10TM
FQB22P10TM Documents

P-Channel Tape & Reel (TR) 125m Ω @ 11A, 10V ±30V 1500pF @ 25V 50nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description
The FQB22P10TM is a planar stripe and DMOS-produced QFET? P-channel enhancement-mode Power MOSFET. This sophisticated MOSFET technology was specifically designed to lower ON-state resistance and provide enhanced switching performance as well as strong avalanche energy strength. It's ideal for applications like switched-mode power supply, audio amplifiers, and variable switching power.
Features
● Low Gate Charge (Typ. 40 nC)
● Low Crss (Typ. 160 pF)
● 100% avalanche tested
● 40nC typical low gate charge
● 160pF typical low Crss
● 175°C Maximum Junction Temperature Rating
Applications
● Use for switching and amplifying electronic signals
● As an inverter
● In digital circuit
● Use as a high-frequency amplifier
● Circuit
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