FQB22P10TM

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Mfr.Part #
FQB22P10TM
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 100V 22A D2PAK
Stock
12,687
In Stock :
12,687

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
3.75W Ta 125W Tc
Drain to Source Breakdown Voltage :
-100V
Continuous Drain Current (ID) :
-22A
Turn-Off Delay Time :
60 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Width :
9.65mm
Power Dissipation :
125W
REACH SVHC :
No SVHC
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 18 hours ago)
Termination :
SMD/SMT
Element Configuration :
Single
Number of Terminations :
2
Lead Free :
Lead Free
Series :
QFET®
Operating Temperature :
-55°C~175°C TJ
Published :
2002
Vgs (Max) :
±30V
Resistance :
125mOhm
Input Capacitance (Ciss) (Max) @ Vds :
1500pF @ 25V
Length :
10.67mm
Current Rating :
-22A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
Height :
4.83mm
Pbfree Code :
yes
Threshold Voltage :
-4V
Turn On Delay Time :
17 ns
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Dual Supply Voltage :
100V
Gate to Source Voltage (Vgs) :
30V
Radiation Hardening :
No
FET Type :
P-Channel
Number of Elements :
1
Rise Time :
170ns
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
88A
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Weight :
1.31247g
ECCN Code :
EAR99
Factory Lead Time :
4 Weeks
JESD-609 Code :
e3
Case Connection :
DRAIN
Voltage - Rated DC :
-100V
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Packaging :
Tape and Reel (TR)
Contact Plating :
Tin
Terminal Form :
Gull wing
Fall Time (Typ) :
110 ns
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
125m Ω @ 11A, 10V
Introducing Transistors - FETs, MOSFETs - Single onsemi FQB22P10TM from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, FQB22P10TM pinout, FQB22P10TM datasheet PDF, FQB22P10TM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQB22P10TM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQB22P10TM


P-Channel Tape & Reel (TR) 125m Ω @ 11A, 10V ±30V 1500pF @ 25V 50nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description


The FQB22P10TM is a planar stripe and DMOS-produced QFET? P-channel enhancement-mode Power MOSFET. This sophisticated MOSFET technology was specifically designed to lower ON-state resistance and provide enhanced switching performance as well as strong avalanche energy strength. It's ideal for applications like switched-mode power supply, audio amplifiers, and variable switching power.



Features


● Low Gate Charge (Typ. 40 nC)

● Low Crss (Typ. 160 pF)

● 100% avalanche tested

● 40nC typical low gate charge

● 160pF typical low Crss

● 175°C Maximum Junction Temperature Rating



Applications


● Use for switching and amplifying electronic signals

● As an inverter

● In digital circuit

● Use as a high-frequency amplifier

● Circuit


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