FQB25N33TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

FAST SWITCHING

Number of Elements :

1

Pin Count :

8

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 15V

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

100A

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

2.01pF @ 25V

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

QFET®

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Terminal Position :

Single

DS Breakdown Voltage-Min :

330V

Vgs (Max) :

±30V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

330V

Drain-source On Resistance-Max :

0.23Ohm

Drain Current-Max (Abs) (ID) :

25A

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

230m Ω @ 12.5A, 10V

Avalanche Energy Rating (Eas) :

370 mJ

Power Dissipation-Max :

3.1W Ta 250W Tc