FQB20N06LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Power Dissipation-Max :

3.75W Ta 53W Tc

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

170 mJ

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Number of Elements :

1

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

21A

Surface Mount :

No

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

55m Ω @ 10.5A, 10V

Pulsed Drain Current-Max (IDM) :

84A

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 25V

Qualification Status :

COMMERCIAL

JEDEC-95 Code :

TO-262AA

Drain-source On Resistance-Max :

0.07Ohm

Drain to Source Voltage (Vdss) :

60V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3