FQB20N06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3.75W Ta 53W Tc

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 25V

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.06Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Number of Terminations :

2

Qualification Status :

COMMERCIAL

Number of Elements :

1

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

20A

Rds On (Max) @ Id, Vgs :

60m Ω @ 10A, 10V

Vgs (Max) :

±25V

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Case Connection :

DRAIN

JESD-609 Code :

e3

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

80A

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

155 mJ

DS Breakdown Voltage-Min :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

20A Tc