FQB20N06LTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

55m Ω @ 10.5A, 10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

60V

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Transistor Application :

SWITCHING

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-262AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain to Source Voltage (Vdss) :

60V

Terminal Form :

THROUGH-HOLE

Drain Current-Max (Abs) (ID) :

21A

Pin Count :

3

Power Dissipation-Max :

3.75W Ta 53W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSIP-T3

Series :

QFET®

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

84A

Drain-source On Resistance-Max :

0.07Ohm

Avalanche Energy Rating (Eas) :

170 mJ

Current - Continuous Drain (Id) @ 25°C :

21A Tc