FQB20N06LTM

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Mfr.Part #
FQB20N06LTM
Manufacturer
Fairchild Semiconductor
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 60V 21A D2PAK
Stock
19,752
In Stock :
19,752

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Series :
QFET®
Transistor Element Material :
SILICON
Terminal Finish :
MATTE TIN
Surface Mount :
No
Peak Reflow Temperature (Cel) :
260
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 5V
Pin Count :
3
JESD-609 Code :
e3
Pulsed Drain Current-Max (IDM) :
84A
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
JEDEC-95 Code :
TO-262AA
Avalanche Energy Rating (Eas) :
170 mJ
Drain Current-Max (Abs) (ID) :
21A
JESD-30 Code :
R-PSIP-T3
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
FET Type :
N-Channel
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
630pF @ 25V
Operating Temperature :
-55°C~175°C TJ
Mounting Type :
Surface Mount
Terminal Position :
Single
Terminal Form :
THROUGH-HOLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.07Ohm
Number of Elements :
1
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation-Max :
3.75W Ta 53W Tc
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
Unknown
Rds On (Max) @ Id, Vgs :
55m Ω @ 10.5A, 10V
Packaging :
Tape and Reel (TR)
Qualification Status :
COMMERCIAL
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
60V
Drain to Source Voltage (Vdss) :
60V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Number of Terminations :
3
Datasheets
FQB20N06LTM
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQB20N06LTM from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:3, FQB20N06LTM pinout, FQB20N06LTM datasheet PDF, FQB20N06LTM amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQB20N06LTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQB20N06LTM


N-Channel Tape & Reel (TR) 55m Ω @ 10.5A, 10V ±20V 630pF @ 25V 13nC @ 5V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQB20N06LTM Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 170 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 630pF @ 25V.21A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 84A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (5V 10V) reduces this device's overall power consumption.

FQB20N06LTM Features


the avalanche energy rating (Eas) is 170 mJ
based on its rated peak drain current 84A.
a 60V drain to source voltage (Vdss)


FQB20N06LTM Applications


There are a lot of Rochester Electronics, LLC
FQB20N06LTM applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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