FQB2P40TM
- Mfr.Part #
- FQB2P40TM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 400V 2A D2PAK
- Stock
- 34,771
- In Stock :
- 34,771
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 2A
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Series :
- QFET®
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 8A
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 120 mJ
- DS Breakdown Voltage-Min :
- 400V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 6.5 Ω @ 1A, 10V
- Terminal Position :
- Single
- FET Type :
- P-Channel
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation-Max :
- 3.13W Ta 63W Tc
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 400V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Terminal Finish :
- MATTE TIN
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- FQB2P40TM

P-Channel Tape & Reel (TR) 6.5 Ω @ 1A, 10V ±30V 350pF @ 25V 13nC @ 10V 400V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB2P40TM Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 120 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 350pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 2A.There is a peak drain current of 8A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 400V, it should remain above the 400V level.The transistor must receive a 400V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FQB2P40TM Features
the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 8A.
a 400V drain to source voltage (Vdss)
FQB2P40TM Applications
There are a lot of Rochester Electronics, LLC
FQB2P40TM applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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