FQB2P25TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Power Dissipation-Max :

3.13W Ta 52W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

4 Ω @ 1.15A, 10V

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

250V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

2.3A Tc

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

2.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

120 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

4Ohm

Drain to Source Voltage (Vdss) :

250V

Vgs(th) (Max) @ Id :

5V @ 250μA

Pulsed Drain Current-Max (IDM) :

9.2A

JESD-30 Code :

R-PSSO-G2

Series :

QFET®

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Pin Count :

3

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

260