FQB2N50TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

5.3 Ω @ 1.05A, 10V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

8.4A

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

120 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.13W Ta 55W Tc

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Mounting Type :

Surface Mount

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Number of Elements :

1

Terminal Form :

Gull wing

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

2.1A

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Pin Count :

3

Terminal Finish :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

2.1A Tc

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)

Series :

QFET®

DS Breakdown Voltage-Min :

500V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB