FQB27P06TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Transistor Application :

SWITCHING

Resistance :

70mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

P-Channel

Power Dissipation-Max :

3.75W Ta 120W Tc

JESD-609 Code :

e3

Turn-Off Delay Time :

30 ns

Threshold Voltage :

-4V

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

-27A

Vgs (Max) :

±25V

Operating Mode :

ENHANCEMENT MODE

Length :

10.67mm

Published :

2001

REACH SVHC :

No SVHC

Height :

4.83mm

Series :

QFET®

Lead Free :

Lead Free

Rise Time :

185ns

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

560 mJ

Drain to Source Breakdown Voltage :

-60V

Turn On Delay Time :

18 ns

Number of Pins :

3

Termination :

SMD/SMT

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Weight :

1.31247g

Fall Time (Typ) :

90 ns

Mounting Type :

Surface Mount

Pbfree Code :

yes

Continuous Drain Current (ID) :

-27A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

60V

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

25V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Width :

9.65mm

Power Dissipation :

3.75W

Contact Plating :

Tin

Element Configuration :

Single

Factory Lead Time :

6 Weeks

Voltage - Rated DC :

-60V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

70m Ω @ 13.5A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)