FQB27P06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Current Rating :

-27A

Avalanche Energy Rating (Eas) :

560 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Rise Time :

185ns

Number of Terminations :

2

Width :

9.65mm

Factory Lead Time :

6 Weeks

Drain to Source Breakdown Voltage :

-60V

FET Type :

P-Channel

Fall Time (Typ) :

90 ns

ECCN Code :

EAR99

Height :

4.83mm

Rds On (Max) @ Id, Vgs :

70m Ω @ 13.5A, 10V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Termination :

SMD/SMT

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

-60V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Mounting Type :

Surface Mount

Threshold Voltage :

-4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

3.75W

Lead Free :

Lead Free

Case Connection :

DRAIN

Terminal Form :

Gull wing

Series :

QFET®

Power Dissipation-Max :

3.75W Ta 120W Tc

Pbfree Code :

yes

Mount :

Surface Mount

Weight :

1.31247g

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

27A Tc

REACH SVHC :

No SVHC

Published :

2001

Element Configuration :

Single

Length :

10.67mm

Dual Supply Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

-27A

Turn On Delay Time :

18 ns

Number of Elements :

1

Number of Pins :

3

Turn-Off Delay Time :

30 ns

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

Resistance :

70mOhm

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V