FQB27P06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

25V

Height :

4.83mm

Dual Supply Voltage :

60V

Published :

2001

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

Length :

10.67mm

Weight :

1.31247g

Continuous Drain Current (ID) :

-27A

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Width :

9.65mm

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

560 mJ

Turn On Delay Time :

18 ns

Contact Plating :

Tin

Number of Terminations :

2

JESD-609 Code :

e3

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Termination :

SMD/SMT

Factory Lead Time :

6 Weeks

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-60V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±25V

Fall Time (Typ) :

90 ns

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Rise Time :

185ns

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

3.75W

Turn-Off Delay Time :

30 ns

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Radiation Hardening :

No

Number of Elements :

1

Element Configuration :

Single

Threshold Voltage :

-4V

Pbfree Code :

yes

ECCN Code :

EAR99

Voltage - Rated DC :

-60V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

70m Ω @ 13.5A, 10V

Current Rating :

-27A

Power Dissipation-Max :

3.75W Ta 120W Tc

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Resistance :

70mOhm

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount