FQA9P25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

150ns

JESD-609 Code :

e3

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Lead Free :

Lead Free

Continuous Drain Current (ID) :

10.5A

Drain to Source Voltage (Vdss) :

250V

Rds On (Max) @ Id, Vgs :

620m Ω @ 5.25A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

Current Rating :

-10.5A

Power Dissipation-Max :

150W Tc

Power Dissipation :

150W

Length :

15.8mm

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Published :

2000

Series :

QFET®

Mount :

Through Hole

Radiation Hardening :

No

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-3P-3, SC-65-3

Number of Terminations :

3

Pbfree Code :

yes

Voltage - Rated DC :

-250V

Number of Pins :

3

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

Turn On Delay Time :

20 ns

Operating Mode :

ENHANCEMENT MODE

Resistance :

620mOhm

Weight :

6.401g

Turn-Off Delay Time :

45 ns

Vgs (Max) :

±30V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 25V

Transistor Element Material :

SILICON

Height :

20.1mm

Width :

5mm

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

650 mJ

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

65 ns

Packaging :

Tube

Drain to Source Breakdown Voltage :

-250V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

42A