FQA9N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-3P-3, SC-65-3

Power Dissipation-Max :

280W Tc

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

900V

Number of Elements :

1

Surface Mount :

No

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Terminal Position :

Single

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 4.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Series :

QFET®

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2007

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

900V

Input Capacitance (Ciss) (Max) @ Vds :

2730pF @ 25V

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

36A

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

900 mJ

Pbfree Code :

yes

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

9A