FQA9N90C

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Mfr.Part #
FQA9N90C
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 900V 9A TO3P
Stock
7,686
In Stock :
7,686

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Series :
QFET®
Reach Compliance Code :
Compliant
JESD-30 Code :
R-PSFM-T3
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 4.5A, 10V
Package / Case :
TO-3P-3, SC-65-3
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) :
9A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2007
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
2730pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
9A Tc
Mounting Type :
Through Hole
Vgs (Max) :
±30V
Pbfree Code :
yes
Qualification Status :
Not Qualified
Surface Mount :
No
Drain to Source Voltage (Vdss) :
900V
Power Dissipation-Max :
280W Tc
DS Breakdown Voltage-Min :
900V
Vgs(th) (Max) @ Id :
5V @ 250μA
Terminal Position :
Single
Pulsed Drain Current-Max (IDM) :
36A
Number of Elements :
1
Avalanche Energy Rating (Eas) :
900 mJ
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
FET Type :
N-Channel
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Datasheets
FQA9N90C
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA9N90C from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, Number of Terminations:3, FQA9N90C pinout, FQA9N90C datasheet PDF, FQA9N90C amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA9N90C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA9N90C


N-Channel Tube 1.4 Ω @ 4.5A, 10V ±30V 2730pF @ 25V 58nC @ 10V 900V TO-3P-3, SC-65-3

FQA9N90C Description


Planar stripe and DMOS technology were used to create the N-channel QFET? enhancement-mode power MOSFET known as the FQA9N90C. This cutting-edge MOSFET technology has been specifically adapted to lower ON-state resistance, provide improved switching performance, and have a high avalanche energy strength. Switched mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with this device.



FQA9N90C Features


  • Low Crss (14pF)

  • 100% avalanche tested

  • Low gate charge (45nC)



FQA9N90C Applications


  • Automotive 

  • Enterprise systems

  • Communications equipment


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