FQA90N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

90A

Current - Continuous Drain (Id) @ 25°C :

90A Tc

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Published :

2013

Resistance :

16mOhm

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Fall Time (Typ) :

160 ns

Drain to Source Breakdown Voltage :

80V

Current Rating :

90A

Pbfree Code :

yes

Vgs (Max) :

±25V

Mount :

Through Hole

Radiation Hardening :

No

Weight :

6.401g

Turn On Delay Time :

30 ns

Turn-Off Delay Time :

100 ns

Package / Case :

TO-3P-3, SC-65-3

Power Dissipation-Max :

214W Tc

Factory Lead Time :

9 Weeks

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Power Dissipation :

214W

Voltage - Rated DC :

80V

Rise Time :

360ns

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

ECCN Code :

EAR99

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

16m Ω @ 45A, 10V

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

25V

Series :

QFET®

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 25V