FQA90N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

160 ns

ECCN Code :

EAR99

Voltage - Rated DC :

80V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

FET Type :

N-Channel

Rise Time :

360ns

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

9 Weeks

Rds On (Max) @ Id, Vgs :

16m Ω @ 45A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

30 ns

Package / Case :

TO-3P-3, SC-65-3

Series :

QFET®

Number of Terminations :

3

Number of Elements :

1

JESD-609 Code :

e3

Weight :

6.401g

Gate to Source Voltage (Vgs) :

25V

Resistance :

16mOhm

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 25V

Number of Pins :

3

Vgs (Max) :

±25V

Terminal Finish :

Tin (Sn)

Current Rating :

90A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Pbfree Code :

yes

Power Dissipation-Max :

214W Tc

Published :

2013

Power Dissipation :

214W

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

90A

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Turn-Off Delay Time :

100 ns

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Drain to Source Breakdown Voltage :

80V