FQA90N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Number of Pins :

3

Series :

QFET®

Gate to Source Voltage (Vgs) :

25V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

100 ns

Fall Time (Typ) :

160 ns

ECCN Code :

EAR99

Package / Case :

TO-3P-3, SC-65-3

Continuous Drain Current (ID) :

90A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Lead Free :

Lead Free

Weight :

6.401g

Pbfree Code :

yes

Current Rating :

90A

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

16m Ω @ 45A, 10V

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

80V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 25V

FET Type :

N-Channel

Rise Time :

360ns

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Voltage - Rated DC :

80V

Factory Lead Time :

9 Weeks

Turn On Delay Time :

30 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

214W

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Terminations :

3

Resistance :

16mOhm

Power Dissipation-Max :

214W Tc

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Vgs (Max) :

±25V