FQA90N15-F109
- Mfr.Part #
- FQA90N15-F109
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 90A TO3PN
- Stock
- 56,425
- In Stock :
- 56,425
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Power Dissipation :
- 6W
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Vgs (Max) :
- ±25V
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 25V
- Continuous Drain Current (ID) :
- 90A
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 285nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 45A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 760ns
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 470 ns
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tube
- Power Dissipation-Max :
- 375W Tc
- Weight :
- 6.401g
- Qualification Status :
- Not Qualified
- Drain to Source Breakdown Voltage :
- 150V
- Series :
- QFET®
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 8700pF @ 25V
- Number of Elements :
- 1
- Package / Case :
- TO-3P-3, SC-65-3
- Fall Time (Typ) :
- 410 ns
- Turn On Delay Time :
- 105 ns
- Datasheets
- FQA90N15-F109

N-Channel Tube 18m Ω @ 45A, 10V ±25V 8700pF @ 25V 285nC @ 10V TO-3P-3, SC-65-3
FQA90N15-F109 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 90A.With a drain-source breakdown voltage of 150V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 150V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 470 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 105 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
FQA90N15-F109 Features
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 470 ns
FQA90N15-F109 Applications
There are a lot of ON Semiconductor
FQA90N15-F109 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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