FQA90N15

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Number of Pins :

3

Element Configuration :

Single

Turn On Delay Time :

105 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

760ns

Weight :

6.401g

Power Dissipation-Max :

375W Tc

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

Vgs (Max) :

±25V

Pbfree Code :

yes

Contact Plating :

Tin

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

150V

Height :

18.9mm

Current - Continuous Drain (Id) @ 25°C :

90A Tc

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Power Dissipation :

375W

Voltage - Rated DC :

150V

Current Rating :

90A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

285nC @ 10V

Continuous Drain Current (ID) :

90A

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

FET Type :

N-Channel

Length :

15.8mm

ECCN Code :

EAR99

Number of Terminations :

3

Width :

5mm

Package / Case :

TO-3P-3, SC-65-3

Series :

QFET®

Threshold Voltage :

4V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

470 ns

REACH SVHC :

No SVHC

Number of Elements :

1

Factory Lead Time :

10 Weeks

Rds On (Max) @ Id, Vgs :

18m Ω @ 45A, 10V

Transistor Application :

SWITCHING

Mount :

Through Hole

Fall Time (Typ) :

410 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON