FQA9N90C-F109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

9A

Qualification Status :

Not Qualified

Number of Pins :

3

Length :

15.8mm

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Avalanche Energy Rating (Eas) :

900 mJ

Turn-Off Delay Time :

100 ns

Continuous Drain Current (ID) :

9A

Mount :

Through Hole

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Transistor Element Material :

SILICON

Turn On Delay Time :

50 ns

Published :

2007

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Power Dissipation :

280W

Height :

18.9mm

Weight :

6.401g

Power Dissipation-Max :

280W Tc

Vgs (Max) :

±30V

Number of Elements :

1

Rise Time :

120ns

Series :

QFET®

Number of Terminations :

3

Transistor Application :

SWITCHING

Package / Case :

TO-3P-3, SC-65-3

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 4.5A, 10V

Drain to Source Breakdown Voltage :

900V

Fall Time (Typ) :

75 ns

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2730pF @ 25V

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

5mm

Threshold Voltage :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Factory Lead Time :

10 Weeks