FQA9N90

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

Not Applicable

Min Operating Temperature :

-55 °C

Continuous Drain Current (ID) :

8.6 A

Terminal Form :

THROUGH-HOLE

JESD-609 Code :

e3

Package Shape :

RECTANGULAR

Reach Compliance Code :

Unknown

Manufacturer :

Rochester Electronics LLC

Drain to Source Breakdown Voltage :

900 V

Radiation Hardening :

No

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

1.3 Ω

Drain to Source Resistance :

1.3 Ω

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

900 mJ

Transistor Element Material :

SILICON

Power Dissipation :

240 W

Pulsed Drain Current-Max (IDM) :

34.4 A

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

DS Breakdown Voltage-Min :

900 V

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Number of Terminals :

3

Pin Count :

3

Turn-Off Delay Time :

135 ns

Terminal Finish :

MATTE TIN

Mount :

Through Hole

RoHS :

Compliant

Turn-On Delay Time :

45 ns

Max Operating Temperature :

150 °C

Number of Elements :

1

Surface Mount :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Rise Time :

100 ns

Gate to Source Voltage (Vgs) :

30 V