FQA9N90-F109
- Mfr.Part #
- FQA9N90-F109
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 8
- Stock
- 32,045
- In Stock :
- 32,045
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Factory Lead Time :
- 4 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 8.6A Tc
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 1.3 Ω @ 4.3A, 10V
- Mount :
- Through Hole
- Rise Time :
- 100ns
- Package / Case :
- TO-3P-3, SC-65-3
- Turn On Delay Time :
- 45 ns
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- QFET®
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 8.6A
- Mounting Type :
- Through Hole
- Weight :
- 6.401g
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Drain to Source Breakdown Voltage :
- 900V
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 80 ns
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Power Dissipation :
- 240W
- Power Dissipation-Max :
- 240W Tc
- Turn-Off Delay Time :
- 135 ns
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700pF @ 25V
- Transistor Application :
- SWITCHING
- Datasheets
- FQA9N90-F109

N-Channel Tube 1.3 Ω @ 4.3A, 10V ±30V 2700pF @ 25V 72nC @ 10V TO-3P-3, SC-65-3
FQA9N90-F109 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 900 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 25V.This device conducts a continuous drain current (ID) of 8.6A, which is the maximum continuous current transistor can conduct.Using VGS=900V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 900V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 135 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 45 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQA9N90-F109 Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 8.6A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 135 ns
FQA9N90-F109 Applications
There are a lot of ON Semiconductor
FQA9N90-F109 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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