FQA9N90-F109

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Mfr.Part #
FQA9N90-F109
Manufacturer
Fairchild Semiconductor
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 8
Stock
32,045
In Stock :
32,045

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
5V @ 250μA
Factory Lead Time :
4 Weeks
Current - Continuous Drain (Id) @ 25°C :
8.6A Tc
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
1.3 Ω @ 4.3A, 10V
Mount :
Through Hole
Rise Time :
100ns
Package / Case :
TO-3P-3, SC-65-3
Turn On Delay Time :
45 ns
Transistor Element Material :
SILICON
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Series :
QFET®
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
30V
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Radiation Hardening :
No
Continuous Drain Current (ID) :
8.6A
Mounting Type :
Through Hole
Weight :
6.401g
FET Type :
N-Channel
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Drain to Source Breakdown Voltage :
900V
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
80 ns
Vgs (Max) :
±30V
Avalanche Energy Rating (Eas) :
900 mJ
Power Dissipation :
240W
Power Dissipation-Max :
240W Tc
Turn-Off Delay Time :
135 ns
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
Transistor Application :
SWITCHING
Datasheets
FQA9N90-F109
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQA9N90-F109 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, FQA9N90-F109 pinout, FQA9N90-F109 datasheet PDF, FQA9N90-F109 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQA9N90-F109 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQA9N90-F109


N-Channel Tube 1.3 Ω @ 4.3A, 10V ±30V 2700pF @ 25V 72nC @ 10V TO-3P-3, SC-65-3

FQA9N90-F109 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 900 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 25V.This device conducts a continuous drain current (ID) of 8.6A, which is the maximum continuous current transistor can conduct.Using VGS=900V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 900V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 135 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 45 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FQA9N90-F109 Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 8.6A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 135 ns


FQA9N90-F109 Applications


There are a lot of ON Semiconductor
FQA9N90-F109 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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