FQA9N90-F109

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

900V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

8.6A Tc

Packaging :

Tube

Factory Lead Time :

4 Weeks

Fall Time (Typ) :

80 ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

240W Tc

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

1.3 Ω @ 4.3A, 10V

Weight :

6.401g

Power Dissipation :

240W

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

8.6A

Turn-Off Delay Time :

135 ns

Turn On Delay Time :

45 ns

Pbfree Code :

yes

Package / Case :

TO-3P-3, SC-65-3

Rise Time :

100ns

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Radiation Hardening :

No

Mount :

Through Hole

Series :

QFET®

Avalanche Energy Rating (Eas) :

900 mJ

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Number of Pins :

3

Number of Terminations :

3

FET Type :

N-Channel

Transistor Element Material :

SILICON

Vgs (Max) :

±30V