FQA28N50F
- Mfr.Part #
- FQA28N50F
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 28.4A TO3P
- Stock
- 16,908
- In Stock :
- 16,908
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Qualification Status :
- COMMERCIAL
- Number of Terminations :
- 3
- Terminal Finish :
- MATTE TIN
- Avalanche Energy Rating (Eas) :
- 1300 mJ
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Drain Current-Max (Abs) (ID) :
- 28.4A
- Drain to Source Voltage (Vdss) :
- 500V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 14.2A, 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-3P-3, SC-65-3
- Series :
- FRFET®
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.6pF @ 25V
- DS Breakdown Voltage-Min :
- 500V
- Power Dissipation-Max :
- 310W Tc
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 28.4A Tc
- Pulsed Drain Current-Max (IDM) :
- 113.6A
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Drain-source On Resistance-Max :
- 0.16Ohm
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- JESD-609 Code :
- e3
- Datasheets
- FQA28N50F

N-Channel Tube 160m Ω @ 14.2A, 10V ±30V 5.6pF @ 25V 140nC @ 10V 500V TO-3P-3, SC-65-3
FQA28N50F Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1300 mJ.A device's maximal input capacitance is 5.6pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 28.4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 113.6A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQA28N50F Features
the avalanche energy rating (Eas) is 1300 mJ
based on its rated peak drain current 113.6A.
a 500V drain to source voltage (Vdss)
FQA28N50F Applications
There are a lot of Rochester Electronics, LLC
FQA28N50F applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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