FQA28N50F

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Mfr.Part #
FQA28N50F
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 28.4A TO3P
Stock
16,908
In Stock :
16,908

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Qualification Status :
COMMERCIAL
Number of Terminations :
3
Terminal Finish :
MATTE TIN
Avalanche Energy Rating (Eas) :
1300 mJ
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Number of Elements :
1
Vgs (Max) :
±30V
Pbfree Code :
yes
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
28.4A
Drain to Source Voltage (Vdss) :
500V
Peak Reflow Temperature (Cel) :
Not Applicable
Rds On (Max) @ Id, Vgs :
160m Ω @ 14.2A, 10V
Vgs(th) (Max) @ Id :
5V @ 250μA
Configuration :
SINGLE WITH BUILT-IN DIODE
Package / Case :
TO-3P-3, SC-65-3
Series :
FRFET®
Surface Mount :
No
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
5.6pF @ 25V
DS Breakdown Voltage-Min :
500V
Power Dissipation-Max :
310W Tc
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
28.4A Tc
Pulsed Drain Current-Max (IDM) :
113.6A
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Drain-source On Resistance-Max :
0.16Ohm
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Reach Compliance Code :
Unknown
JESD-609 Code :
e3
Datasheets
FQA28N50F
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA28N50F from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-55°C~150°C TJ, FQA28N50F pinout, FQA28N50F datasheet PDF, FQA28N50F amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA28N50F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA28N50F


N-Channel Tube 160m Ω @ 14.2A, 10V ±30V 5.6pF @ 25V 140nC @ 10V 500V TO-3P-3, SC-65-3

FQA28N50F Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1300 mJ.A device's maximal input capacitance is 5.6pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 28.4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 113.6A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

FQA28N50F Features


the avalanche energy rating (Eas) is 1300 mJ
based on its rated peak drain current 113.6A.
a 500V drain to source voltage (Vdss)


FQA28N50F Applications


There are a lot of Rochester Electronics, LLC
FQA28N50F applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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