FQA24N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

500V

Weight :

6.401g

JESD-609 Code :

e3

Number of Elements :

1

Resistance :

200mOhm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

96A

Length :

15.8mm

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

24A

Power Dissipation :

290W

Power Dissipation-Max :

290W Tc

RoHS Status :

RoHS Compliant

Width :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

500V

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Series :

QFET®

Published :

2000

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 6 days ago)

Factory Lead Time :

4 Weeks

Current - Continuous Drain (Id) @ 25°C :

24A Tc

ECCN Code :

EAR99

Element Configuration :

Single

Transistor Application :

SWITCHING

Nominal Vgs :

5 V

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Turn On Delay Time :

80 ns

FET Type :

N-Channel

Voltage - Rated DC :

500V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-3P-3, SC-65-3

Transistor Element Material :

SILICON

Number of Terminations :

3

Lead Free :

Lead Free

Packaging :

Tube

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Turn-Off Delay Time :

200 ns

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Rise Time :

250ns

Current Rating :

24A

Rds On (Max) @ Id, Vgs :

200m Ω @ 12A, 10V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

155 ns

Height :

18.9mm

Pbfree Code :

yes