FQA24N50
- Mfr.Part #
- FQA24N50
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 24A TO3P
- Stock
- 7,350
- In Stock :
- 7,350
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Dual Supply Voltage :
- 500V
- Drain to Source Breakdown Voltage :
- 500V
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 12A, 10V
- Voltage - Rated DC :
- 500V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Package / Case :
- TO-3P-3, SC-65-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 250ns
- Pulsed Drain Current-Max (IDM) :
- 96A
- Current Rating :
- 24A
- Packaging :
- Tube
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Published :
- 2000
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Continuous Drain Current (ID) :
- 24A
- Terminal Finish :
- Tin (Sn)
- Width :
- 5mm
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Length :
- 15.8mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- Fall Time (Typ) :
- 155 ns
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 290W Tc
- Nominal Vgs :
- 5 V
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Number of Pins :
- 3
- Series :
- QFET®
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 290W
- Weight :
- 6.401g
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 80 ns
- Height :
- 18.9mm
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Resistance :
- 200mOhm
- Turn-Off Delay Time :
- 200 ns
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Datasheets
- FQA24N50

N-Channel Tube 200m Ω @ 12A, 10V ±30V 4500pF @ 25V 120nC @ 10V TO-3P-3, SC-65-3
FQA24N50 Description
FQA24N50 is a 500v N-Channel QFET? Power MOSFET. The N-Channel enhancement mode power field effect transistor FQA24N50 is produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology FQA24N50 has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA24N50 is well suited for high-efficiency switch mode power supply, power factor correction, and electronic lamp ballast based on a half-bridge.
FQA24N50 Features
-
24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A
-
Low Gate Charge (Typ. 90 nC)
-
Low Crss (Typ. 55 pF)
-
100% Avalanche Tested
-
RoHS compliant
FQA24N50 Applications
-
High-efficiency switch mode power supply
-
Power factor correction
-
Electronic lamp ballast based on half-bridge
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