FQA24N50F

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Mfr.Part #
FQA24N50F
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 24A TO3P
Stock
12,278
In Stock :
12,278

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
200mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
5V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Drain to Source Voltage (Vdss) :
500V
Power Dissipation-Max :
290W Tc
Supplier Device Package :
TO-3P
Package / Case :
TO-3P-3, SC-65-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Series :
FRFET®
FET Type :
N-Channel
Published :
2001
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Datasheets
FQA24N50F
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA24N50F from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, FQA24N50F pinout, FQA24N50F datasheet PDF, FQA24N50F amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA24N50F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA24N50F


N-Channel Tube 200mOhm @ 12A, 10V ±30V 4500pF @ 25V 120nC @ 10V 500V TO-3P-3, SC-65-3

Description


The FQA24N50F is a 500V N-Channel MOSFET. The N-Channel enhancement mode power field effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild.

In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high-energy pulses. These devices work well in basic full-bridge topologies, phase-shift ZVS, and high-efficiency switch mode power supplies that utilize the body diode.



Features


  • Fast switching

  • 100% avalanche tested

  • Improved dv/dt capability

  • Fast recovery body diode ( max, 250ns )

  • 24A, 500V, RDS(on) = 0.2? @VGS = 10 V

  • Low gate charge ( typical 90 nC)

  • Low Crss ( typical 55 pF)



Applications


  • In radio frequency applications

  • Resistor

  • Capacitor

  • Inductor

  • DC motors

  • In designing chopper circuits


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