FQA28N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Power Dissipation-Max :

310W Tc

Series :

QFET®

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

500V

Power Dissipation :

310W

Height :

18.9mm

Voltage - Rated DC :

500V

Current Rating :

28.4A

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 week ago)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Number of Elements :

1

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

Turn-Off Delay Time :

250 ns

Continuous Drain Current (ID) :

28.4A

Dual Supply Voltage :

500V

Nominal Vgs :

5 V

FET Type :

N-Channel

Rise Time :

290ns

Turn On Delay Time :

100 ns

Transistor Application :

SWITCHING

Mount :

Through Hole

Package / Case :

TO-3P-3, SC-65-3

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

ECCN Code :

EAR99

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

28.4A Tc

Width :

5mm

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Published :

2000

REACH SVHC :

No SVHC

Element Configuration :

Single

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Length :

15.8mm

Weight :

6.401g

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Fall Time (Typ) :

175 ns

Rds On (Max) @ Id, Vgs :

160m Ω @ 14.2A, 10V