FQA28N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

ECCN Code :

EAR99

Element Configuration :

Single

Power Dissipation-Max :

310W Tc

Weight :

6.401g

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Current Rating :

28.4A

Dual Supply Voltage :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Pbfree Code :

yes

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

500V

Nominal Vgs :

5 V

Factory Lead Time :

4 Weeks

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 week ago)

Number of Terminations :

3

Vgs (Max) :

±30V

Rise Time :

290ns

Contact Plating :

Tin

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Packaging :

Tube

Package / Case :

TO-3P-3, SC-65-3

Height :

18.9mm

FET Type :

N-Channel

Continuous Drain Current (ID) :

28.4A

Current - Continuous Drain (Id) @ 25°C :

28.4A Tc

Length :

15.8mm

Number of Pins :

3

Width :

5mm

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Published :

2000

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Rds On (Max) @ Id, Vgs :

160m Ω @ 14.2A, 10V

Power Dissipation :

310W

Voltage - Rated DC :

500V

Turn On Delay Time :

100 ns

Turn-Off Delay Time :

250 ns

Mounting Type :

Through Hole

Fall Time (Typ) :

175 ns

Lead Free :

Lead Free

JESD-609 Code :

e3