FQA28N50

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Mfr.Part #
FQA28N50
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 28.4A TO3P
Stock
31,780
In Stock :
31,780

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Power Dissipation-Max :
310W Tc
Series :
QFET®
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
500V
Power Dissipation :
310W
Height :
18.9mm
Voltage - Rated DC :
500V
Current Rating :
28.4A
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 1 week ago)
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
RoHS Compliant
Number of Elements :
1
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs(th) (Max) @ Id :
5V @ 250μA
Radiation Hardening :
No
Turn-Off Delay Time :
250 ns
Continuous Drain Current (ID) :
28.4A
Dual Supply Voltage :
500V
Nominal Vgs :
5 V
FET Type :
N-Channel
Rise Time :
290ns
Turn On Delay Time :
100 ns
Transistor Application :
SWITCHING
Mount :
Through Hole
Package / Case :
TO-3P-3, SC-65-3
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
ECCN Code :
EAR99
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
28.4A Tc
Width :
5mm
Gate to Source Voltage (Vgs) :
30V
Packaging :
Tube
Published :
2000
REACH SVHC :
No SVHC
Element Configuration :
Single
Contact Plating :
Tin
Input Capacitance (Ciss) (Max) @ Vds :
5600pF @ 25V
Length :
15.8mm
Weight :
6.401g
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Factory Lead Time :
4 Weeks
Fall Time (Typ) :
175 ns
Rds On (Max) @ Id, Vgs :
160m Ω @ 14.2A, 10V
Datasheets
FQA28N50
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA28N50 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, FQA28N50 pinout, FQA28N50 datasheet PDF, FQA28N50 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA28N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA28N50


N-Channel Tube 160m Ω @ 14.2A, 10V ±30V 5600pF @ 25V 140nC @ 10V TO-3P-3, SC-65-3

FQA28N50 Description


These N-Channel enhancement mode power field effect transistors are made utilizing a proprietary planar stripe DMOS process developed by ON Semiconductor. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver excellent switchingperformance, and withstand high energy pulses. These gadgets are ideal for power factor correction, electronic lamp ballasts based on half bridges, and high efficiency switch mode power supplies.



FQA28N50 Features


  • 28.4 A, 500 V, RDS(on) = 160 m|? (Max.) @ VGS = 10 V, ID = 14.2 A

  • Low Gate Charge (Typ. 110 nC)

  • Low Crss (Typ. 60 pF)

  • 100% Avalanche Tested

  • RoHS compliant



FQA28N50 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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