FQA28N15
- Mfr.Part #
- FQA28N15
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 33A TO3PN
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Packaging :
- Tube
- Vgs (Max) :
- ±25V
- Rise Time :
- 180ns
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Height :
- 20.1mm
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Series :
- QFET®
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Power Dissipation-Max :
- 227W Tc
- Factory Lead Time :
- 4 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Pbfree Code :
- yes
- Power Dissipation :
- 227W
- Length :
- 15.8mm
- Weight :
- 6.401g
- Threshold Voltage :
- 4V
- Radiation Hardening :
- No
- Resistance :
- 90mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600pF @ 25V
- Package / Case :
- TO-3P-3, SC-65-3
- Turn On Delay Time :
- 17 ns
- Number of Terminations :
- 3
- Number of Elements :
- 1
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- 150V
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Published :
- 2013
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- FAST SWITCHING
- Continuous Drain Current (ID) :
- 33A
- Current Rating :
- 33A
- Width :
- 5mm
- Fall Time (Typ) :
- 115 ns
- Turn-Off Delay Time :
- 100 ns
- Voltage - Rated DC :
- 150V
- Gate to Source Voltage (Vgs) :
- 25V
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 16.5A, 10V
- Datasheets
- FQA28N15

N-Channel Tube 90m Ω @ 16.5A, 10V ±25V 1600pF @ 25V 52nC @ 10V TO-3P-3, SC-65-3
FQA28N15 Description
Utilizing the exclusive planar stripe and DMOS technology of Fairchild Semiconductor, this N-Channel enhancement mode power MOSFET was created. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. These components are appropriate for applications requiring variable switching power, DC motor control, audio amplifier, and switched mode power supplies.
FQA28N15 Features
-
33 A, 150 V, RDS(on) = 90 m? (Max.) @ VGS = 10 V, ID = 16.5 A
-
Low Gate Charge (Typ. 40 nC)
-
Low Crss (Typ. 50 pF)
-
100% Avalanche Tested
-
175°C Maximum Junction Temperature Rating
FQA28N15 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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