FQA28N15

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

180ns

JESD-609 Code :

e3

Fall Time (Typ) :

115 ns

Power Dissipation :

227W

ECCN Code :

EAR99

Weight :

6.401g

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Terminal Finish :

Tin (Sn)

Series :

QFET®

Element Configuration :

Single

Power Dissipation-Max :

227W Tc

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

33A

Lead Free :

Lead Free

Threshold Voltage :

4V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

25V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

150V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Published :

2013

Number of Terminations :

3

Package / Case :

TO-3P-3, SC-65-3

Turn-Off Delay Time :

100 ns

Packaging :

Tube

Turn On Delay Time :

17 ns

Resistance :

90mOhm

Vgs (Max) :

±25V

Height :

20.1mm

Length :

15.8mm

Voltage - Rated DC :

150V

Current Rating :

33A

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Additional Feature :

FAST SWITCHING

Rds On (Max) @ Id, Vgs :

90m Ω @ 16.5A, 10V

Number of Elements :

1

Transistor Application :

SWITCHING

Width :

5mm

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

33A Tc