FQA28N50
- Mfr.Part #
- FQA28N50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- 28.4A, 500V, 0.16OHM, N-CHANNEL
- Stock
- 31,780
- In Stock :
- 31,780
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 290ns
- Current - Continuous Drain (Id) @ 25°C :
- 28.4A Tc
- Length :
- 15.8mm
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 18.9mm
- Turn-Off Delay Time :
- 250 ns
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 310W Tc
- Number of Pins :
- 3
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Current Rating :
- 28.4A
- Series :
- QFET®
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±30V
- Mount :
- Through Hole
- Width :
- 5mm
- Dual Supply Voltage :
- 500V
- FET Type :
- N-Channel
- Package / Case :
- TO-3P-3, SC-65-3
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 14.2A, 10V
- Contact Plating :
- Tin
- Weight :
- 6.401g
- Drain to Source Breakdown Voltage :
- 500V
- Turn On Delay Time :
- 100 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 5600pF @ 25V
- Number of Elements :
- 1
- Published :
- 2000
- Continuous Drain Current (ID) :
- 28.4A
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation :
- 310W
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 175 ns
- Voltage - Rated DC :
- 500V
- Nominal Vgs :
- 5 V
- REACH SVHC :
- No SVHC
- Datasheets
- FQA28N50

N-Channel Tube 160m Ω @ 14.2A, 10V ±30V 5600pF @ 25V 140nC @ 10V TO-3P-3, SC-65-3
FQA28N50 Description
These N-Channel enhancement mode power field effect transistors are made utilizing a proprietary planar stripe DMOS process developed by ON Semiconductor. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver excellent switchingperformance, and withstand high energy pulses. These gadgets are ideal for power factor correction, electronic lamp ballasts based on half bridges, and high efficiency switch mode power supplies.
FQA28N50 Features
-
28.4 A, 500 V, RDS(on) = 160 m|? (Max.) @ VGS = 10 V, ID = 14.2 A
-
Low Gate Charge (Typ. 110 nC)
-
Low Crss (Typ. 60 pF)
-
100% Avalanche Tested
-
RoHS compliant
FQA28N50 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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