FQA28N50

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

310W Tc

Operating Temperature :

-55°C~150°C TJ

Width :

5mm

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Radiation Hardening :

No

Continuous Drain Current (ID) :

28.4A

Turn On Delay Time :

100 ns

Rds On (Max) @ Id, Vgs :

160m Ω @ 14.2A, 10V

Transistor Application :

SWITCHING

Packaging :

Tube

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 week ago)

Height :

18.9mm

Package / Case :

TO-3P-3, SC-65-3

JESD-609 Code :

e3

Dual Supply Voltage :

500V

Series :

QFET®

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Published :

2000

Contact Plating :

Tin

Mounting Type :

Through Hole

Voltage - Rated DC :

500V

Current - Continuous Drain (Id) @ 25°C :

28.4A Tc

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Nominal Vgs :

5 V

Turn-Off Delay Time :

250 ns

Length :

15.8mm

Factory Lead Time :

4 Weeks

Weight :

6.401g

Current Rating :

28.4A

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

500V

Pbfree Code :

yes

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Fall Time (Typ) :

175 ns

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

290ns

Number of Terminations :

3

Power Dissipation :

310W

Lead Free :

Lead Free

Vgs (Max) :

±30V