FQA27N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

110m Ω @ 13.5A, 10V

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

270ns

Input Capacitance (Ciss) (Max) @ Vds :

2450pF @ 25V

Package / Case :

TO-3P-3, SC-65-3

Mounting Type :

Through Hole

Packaging :

Tube

Continuous Drain Current (ID) :

27A

Transistor Element Material :

SILICON

Published :

2013

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

600 mJ

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Weight :

6.401g

Series :

QFET®

Number of Pins :

3

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

250V

Voltage - Rated DC :

250V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Number of Elements :

1

Power Dissipation :

210W

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

210W Tc

Factory Lead Time :

4 Weeks

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Element Configuration :

Single

Current Rating :

27A

Turn-Off Delay Time :

80 ns

Radiation Hardening :

No

ECCN Code :

EAR99

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Fall Time (Typ) :

120 ns

Turn On Delay Time :

32 ns