FQA24N60
- Mfr.Part #
- FQA24N60
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 23.5A TO3PN
- Stock
- 4,147
- In Stock :
- 4,147
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Voltage - Rated DC :
- 600V
- Factory Lead Time :
- 9 Weeks
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Weight :
- 6.401g
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 23.5A Tc
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 94A
- Published :
- 2000
- Rise Time :
- 270ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 310W Tc
- Transistor Application :
- SWITCHING
- Series :
- QFET®
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 90 ns
- Height :
- 18.9mm
- Threshold Voltage :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Width :
- 5mm
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Length :
- 15.8mm
- Continuous Drain Current (ID) :
- 23.5A
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 11.8A, 10V
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 310W
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.24Ohm
- Fall Time (Typ) :
- 170 ns
- Package / Case :
- TO-3P-3, SC-65-3
- Vgs (Max) :
- ±30V
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 600V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- FET Type :
- N-Channel
- Current Rating :
- 23.5A
- Turn-Off Delay Time :
- 200 ns
- REACH SVHC :
- No SVHC
- Datasheets
- FQA24N60

N-Channel Tube 240m Ω @ 11.8A, 10V ±30V 5500pF @ 25V 145nC @ 10V TO-3P-3, SC-65-3
FQA24N60 Description
The FQA24N60 N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQA24N60 Features
-
Low Gate Charge (Typ. 110 nC)
-
Low Crss (Typ. 56 pF)
-
100% Avalanche Tested
-
ROHS3 Compliant
-
Lead Free
-
No SVHC
FQA24N60 Applications
-
Switching Application
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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