FQA24N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

5V

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

23.5A Tc

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

240m Ω @ 11.8A, 10V

Power Dissipation-Max :

310W Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Rise Time :

270ns

Number of Pins :

3

Turn On Delay Time :

90 ns

Current Rating :

23.5A

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

600V

JESD-609 Code :

e3

Power Dissipation :

310W

Number of Terminations :

3

Weight :

6.401g

Series :

QFET®

Factory Lead Time :

9 Weeks

Continuous Drain Current (ID) :

23.5A

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Turn-Off Delay Time :

200 ns

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Number of Elements :

1

Fall Time (Typ) :

170 ns

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

Pulsed Drain Current-Max (IDM) :

94A

Package / Case :

TO-3P-3, SC-65-3

Height :

18.9mm

Width :

5mm

Published :

2000

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Length :

15.8mm

Drain-source On Resistance-Max :

0.24Ohm

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Element Configuration :

Single