FQA24N60
- Mfr.Part #
- FQA24N60
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 23.5A TO3PN
- Stock
- 4,147
- In Stock :
- 4,147
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 5mm
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Rise Time :
- 270ns
- Weight :
- 6.401g
- Turn On Delay Time :
- 90 ns
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 11.8A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Power Dissipation-Max :
- 310W Tc
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Voltage - Rated DC :
- 600V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Threshold Voltage :
- 5V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2000
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Series :
- QFET®
- Packaging :
- Tube
- Package / Case :
- TO-3P-3, SC-65-3
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 94A
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 200 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Length :
- 15.8mm
- Factory Lead Time :
- 9 Weeks
- Power Dissipation :
- 310W
- Current - Continuous Drain (Id) @ 25°C :
- 23.5A Tc
- Drain to Source Breakdown Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 170 ns
- Height :
- 18.9mm
- Continuous Drain Current (ID) :
- 23.5A
- Vgs (Max) :
- ±30V
- Drain-source On Resistance-Max :
- 0.24Ohm
- Current Rating :
- 23.5A
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- FQA24N60

N-Channel Tube 240m Ω @ 11.8A, 10V ±30V 5500pF @ 25V 145nC @ 10V TO-3P-3, SC-65-3
FQA24N60 Description
The FQA24N60 N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQA24N60 Features
-
Low Gate Charge (Typ. 110 nC)
-
Low Crss (Typ. 56 pF)
-
100% Avalanche Tested
-
ROHS3 Compliant
-
Lead Free
-
No SVHC
FQA24N60 Applications
-
Switching Application
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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