FQA24N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Fall Time (Typ) :

170 ns

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Weight :

6.401g

Continuous Drain Current (ID) :

23.5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

94A

Number of Terminations :

3

Mount :

Through Hole

FET Type :

N-Channel

Height :

18.9mm

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

15.8mm

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

600V

Power Dissipation-Max :

310W Tc

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Element Configuration :

Single

Qualification Status :

Not Qualified

Width :

5mm

Published :

2000

Number of Pins :

3

Current Rating :

23.5A

Threshold Voltage :

5V

Package / Case :

TO-3P-3, SC-65-3

Turn-Off Delay Time :

200 ns

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

600V

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

240m Ω @ 11.8A, 10V

Current - Continuous Drain (Id) @ 25°C :

23.5A Tc

Drain-source On Resistance-Max :

0.24Ohm

ECCN Code :

EAR99

Rise Time :

270ns

Power Dissipation :

310W

Factory Lead Time :

9 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Turn On Delay Time :

90 ns