FQA24N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2000

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Packaging :

Tube

Rise Time :

270ns

Drain to Source Breakdown Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Turn-Off Delay Time :

200 ns

Power Dissipation :

310W

Rds On (Max) @ Id, Vgs :

240m Ω @ 11.8A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Width :

5mm

Package / Case :

TO-3P-3, SC-65-3

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Length :

15.8mm

Fall Time (Typ) :

170 ns

Number of Pins :

3

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.24Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

94A

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Transistor Element Material :

SILICON

Number of Terminations :

3

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Threshold Voltage :

5V

Lead Free :

Lead Free

Factory Lead Time :

9 Weeks

Voltage - Rated DC :

600V

REACH SVHC :

No SVHC

Series :

QFET®

Element Configuration :

Single

FET Type :

N-Channel

Continuous Drain Current (ID) :

23.5A

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

90 ns

Weight :

6.401g

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Power Dissipation-Max :

310W Tc

Current Rating :

23.5A

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

23.5A Tc

Height :

18.9mm