FQA24N60
- Mfr.Part #
- FQA24N60
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 23.5A TO3PN
- Stock
- 4,147
- In Stock :
- 4,147
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Height :
- 18.9mm
- Width :
- 5mm
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 11.8A, 10V
- Series :
- QFET®
- Turn-Off Delay Time :
- 200 ns
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Power Dissipation-Max :
- 310W Tc
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 23.5A Tc
- Weight :
- 6.401g
- Published :
- 2000
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Package / Case :
- TO-3P-3, SC-65-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 600V
- Mount :
- Through Hole
- Turn On Delay Time :
- 90 ns
- Drain to Source Breakdown Voltage :
- 600V
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Threshold Voltage :
- 5V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Factory Lead Time :
- 9 Weeks
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 0.24Ohm
- Continuous Drain Current (ID) :
- 23.5A
- Rise Time :
- 270ns
- Power Dissipation :
- 310W
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Length :
- 15.8mm
- Gate to Source Voltage (Vgs) :
- 30V
- Pulsed Drain Current-Max (IDM) :
- 94A
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Current Rating :
- 23.5A
- Fall Time (Typ) :
- 170 ns
- Datasheets
- FQA24N60

N-Channel Tube 240m Ω @ 11.8A, 10V ±30V 5500pF @ 25V 145nC @ 10V TO-3P-3, SC-65-3
FQA24N60 Description
The FQA24N60 N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQA24N60 Features
-
Low Gate Charge (Typ. 110 nC)
-
Low Crss (Typ. 56 pF)
-
100% Avalanche Tested
-
ROHS3 Compliant
-
Lead Free
-
No SVHC
FQA24N60 Applications
-
Switching Application
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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