FQA24N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

23.5A

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

240m Ω @ 11.8A, 10V

Fall Time (Typ) :

170 ns

Rise Time :

270ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

94A

Published :

2000

Mount :

Through Hole

Vgs (Max) :

±30V

Width :

5mm

Length :

15.8mm

Turn On Delay Time :

90 ns

Lead Free :

Lead Free

Factory Lead Time :

9 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

600V

Power Dissipation-Max :

310W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.24Ohm

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Terminal Finish :

Tin (Sn)

Threshold Voltage :

5V

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

Current Rating :

23.5A

Number of Pins :

3

Weight :

6.401g

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

23.5A Tc

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Package / Case :

TO-3P-3, SC-65-3

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Element Configuration :

Single

Power Dissipation :

310W

Height :

18.9mm

Drain to Source Breakdown Voltage :

600V

Turn-Off Delay Time :

200 ns