FJV3114RMTF
- Mfr.Part #
- FJV3114RMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR,
- Stock
- 28,478
- In Stock :
- 28,478
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Width :
- 1.3mm
- Number of Terminations :
- 3
- Min Operating Temperature :
- -55°C
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 300mV
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2013
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- HTS Code :
- 8541.21.00.95
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 13 Weeks
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 10V
- Continuous Collector Current :
- 100mA
- Transition Frequency :
- 250MHz
- Frequency - Transition :
- 250MHz
- Voltage - Rated DC :
- 50V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Current Rating :
- 100mA
- Collector Emitter Breakdown Voltage :
- 50V
- Base Part Number :
- FJV3114
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Max Breakdown Voltage :
- 50V
- Terminal Position :
- Dual
- Weight :
- 30mg
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Type :
- NPN - Pre-Biased
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Form :
- Gull wing
- hFE Min :
- 68
- Height :
- 930μm
- Max Power Dissipation :
- 200mW
- Length :
- 2.92mm
- Terminal Finish :
- Tin (Sn)
- Resistor - Base (R1) :
- 4.7 k Ω
- Polarity :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Element Configuration :
- Single
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 10
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 68 @ 5mA 5V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Resistor - Emitter Base (R2) :
- 47 k Ω
- Power Dissipation :
- 200mW
- Datasheets
- FJV3114RMTF

FJV3114RMTF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
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