FJV3102RMTF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Emitter Base (R2) :

10 k Ω

Emitter Base Voltage (VEBO) :

10V

Published :

2016

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

50V

Transistor Type :

NPN - Pre-Biased

Base Part Number :

FJV3102

Weight :

30mg

Collector Emitter Voltage (VCEO) :

50V

Voltage - Rated DC :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Max Collector Current :

100mA

Lead Free :

Lead Free

Frequency - Transition :

250MHz

Radiation Hardening :

No

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Resistor - Base (R1) :

10 k Ω

Min Operating Temperature :

-55°C

Transistor Application :

SWITCHING

Continuous Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Polarity :

NPN

Number of Terminations :

3

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Mounting Type :

Surface Mount

Current Rating :

100mA

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Pbfree Code :

yes

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

250MHz

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

50V

Power Dissipation :

200mW

Number of Elements :

1

HTS Code :

8541.21.00.95

Number of Pins :

3

ECCN Code :

EAR99

Max Power Dissipation :

200mW

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

JESD-609 Code :

e3

hFE Min :

30