FJV3105RMTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Elements :

1

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

10V

Resistor - Emitter Base (R2) :

10 k Ω

Terminal Position :

Dual

Max Power Dissipation :

200mW

Continuous Collector Current :

100mA

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Transistor Application :

SWITCHING

Frequency - Transition :

250MHz

Resistor - Base (R1) :

4.7 k Ω

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Published :

2016

Current Rating :

100mA

Mount :

Surface Mount

Element Configuration :

Single

Weight :

30mg

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Transition Frequency :

250MHz

Terminal Form :

Gull wing

Voltage - Rated DC :

50V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

50V

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Lifecycle Status :

LIFETIME (Last Updated: 2 days ago)

Number of Pins :

3

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

30

Terminal Finish :

Tin (Sn)

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Base Part Number :

FJV3105

HTS Code :

8541.21.00.95

Transistor Type :

NPN - Pre-Biased

Factory Lead Time :

13 Weeks

Power Dissipation :

200mW