FJV3105RMTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Operating Temperature :

150°C

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

10V

Power Dissipation :

200mW

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Current Rating :

100mA

Frequency - Transition :

250MHz

JESD-609 Code :

e3

Polarity :

NPN

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

hFE Min :

30

Resistor - Base (R1) :

4.7 k Ω

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Mount :

Surface Mount

Max Collector Current :

100mA

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

50V

Number of Pins :

3

Terminal Position :

Dual

Base Part Number :

FJV3105

Terminal Form :

Gull wing

Published :

2016

HTS Code :

8541.21.00.95

Factory Lead Time :

13 Weeks

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

50V

Resistor - Emitter Base (R2) :

10 k Ω

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

50V

Number of Terminations :

3

Transistor Type :

NPN - Pre-Biased

Continuous Collector Current :

100mA

Transition Frequency :

250MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Min Operating Temperature :

-55°C

Max Power Dissipation :

200mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

30mg

Lifecycle Status :

LIFETIME (Last Updated: 2 days ago)

Max Breakdown Voltage :

50V