FJV3103RMTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Operating Temperature :

150°C

hFE Min :

56

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Transistor Type :

NPN - Pre-Biased

Element Configuration :

Single

Number of Elements :

1

Current Rating :

100mA

Weight :

30mg

Max Breakdown Voltage :

50V

Length :

2.92mm

RoHS Status :

RoHS Compliant

Base Part Number :

FJV3103

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

200mW

Number of Pins :

3

JESD-609 Code :

e3

Power Dissipation :

200mW

Collector Base Voltage (VCBO) :

50V

Width :

1.3mm

Min Operating Temperature :

-55°C

Resistor - Base (R1) :

22 k Ω

HTS Code :

8541.21.00.95

Published :

2013

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Collector Emitter Saturation Voltage :

300mV

Height :

930μm

Frequency - Transition :

250MHz

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Pbfree Code :

yes

Voltage - Rated DC :

50V

Terminal Finish :

Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transition Frequency :

250MHz

Terminal Position :

Dual

Mount :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Resistor - Emitter Base (R2) :

22 k Ω

Continuous Collector Current :

100mA

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

10V

Polarity :

NPN

Lead Free :

Lead Free

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V