FJV3113RMTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Published :

2013

Terminal Form :

Gull wing

HTS Code :

8541.21.00.95

Transistor Type :

NPN - Pre-Biased

Continuous Collector Current :

100mA

ECCN Code :

EAR99

Base Part Number :

FJV3113

Polarity :

NPN

JESD-609 Code :

e3

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

10V

Voltage - Rated DC :

50V

Max Breakdown Voltage :

50V

Collector Base Voltage (VCBO) :

50V

Frequency - Transition :

250MHz

Number of Pins :

3

Factory Lead Time :

2 Weeks

Transistor Application :

SWITCHING

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Operating Temperature :

150°C

Collector Emitter Saturation Voltage :

300mV

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Max Power Dissipation :

200mW

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Width :

1.3mm

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Transition Frequency :

250MHz

Terminal Finish :

Tin (Sn)

Current Rating :

100mA

Power Dissipation :

200mW

Resistor - Emitter Base (R2) :

47 k Ω

Weight :

30mg

Terminal Position :

Dual

hFE Min :

68

Radiation Hardening :

No

Length :

2.92mm

Height :

930μm

Resistor - Base (R1) :

2.2 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Number of Elements :

1

Collector Emitter Breakdown Voltage :

50V