FJV3109RMTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

40V

Current - Collector (Ic) (Max) :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Current Rating :

100mA

Supplier Device Package :

SOT-23-3 (TO-236)

Current - Collector Cutoff (Max) :

100nA ICBO

Min Operating Temperature :

-55°C

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Continuous Collector Current :

100mA

Mounting Type :

Surface Mount

Resistor - Base (R1) :

4.7 kOhms

Polarity :

NPN

Voltage - Collector Emitter Breakdown (Max) :

40V

Power Dissipation :

200mW

Voltage - Rated DC :

40V

Collector Emitter Voltage (VCEO) :

40V

Transistor Type :

NPN - Pre-Biased

Max Power Dissipation :

200mW

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Frequency - Transition :

250MHz

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Max Collector Current :

100mA

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Pins :

3

Published :

2002

hFE Min :

100

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Power - Max :

200mW