FJP5555TU

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Mfr.Part #
FJP5555TU
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 5A TO220-3
Stock
3,053
In Stock :
3,053

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
NPN
Factory Lead Time :
14 Weeks
Voltage - Rated DC :
400V
Element Configuration :
Single
ECCN Code :
EAR99
Number of Elements :
1
Collector Emitter Saturation Voltage :
1.5V
Lead Free :
Lead Free
Power Dissipation :
75W
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
14V
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1A, 3.5A
Terminal Finish :
Tin (Sn)
Mount :
Through Hole
Weight :
1.8g
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Operating Temperature :
150°C TJ
Width :
4.83mm
Transistor Type :
NPN
Length :
10.67mm
Collector Emitter Voltage (VCEO) :
400V
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 800mA 3V
Current Rating :
5A
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
JESD-609 Code :
e3
Max Power Dissipation :
75W
Transistor Element Material :
SILICON
Packaging :
Tube
Transistor Application :
SWITCHING
Published :
2011
Height :
16.51mm
hFE Min :
20
Collector Emitter Breakdown Voltage :
400V
Max Collector Current :
5A
Number of Pins :
3
Radiation Hardening :
No
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
1.05kV
Datasheets
FJP5555TU
Introducing Transistors - Bipolar (BJT) - Single Fairchild Semiconductor FJP5555TU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:150°C TJ, Number of Terminations:3, Number of Pins:3, FJP5555TU pinout, FJP5555TU datasheet PDF, FJP5555TU amp .Beyond Transistors - Bipolar (BJT) - Single Fairchild Semiconductor FJP5555TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FJP5555TU


NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP5555TU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 800mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 3.5A.The emitter base voltage can be kept at 14V for high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

FJP5555TU Features


the DC current gain for this device is 20 @ 800mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 14V
the current rating of this device is 5A


FJP5555TU Applications


There are a lot of ON Semiconductor
FJP5555TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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