FJP5555TU

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Mfr.Part #
FJP5555TU
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 5A TO220-3
Stock
3,053
In Stock :
3,053

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
75W
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Collector Emitter Voltage (VCEO) :
400V
Collector Emitter Breakdown Voltage :
400V
Voltage - Rated DC :
400V
Operating Temperature :
150°C TJ
Number of Terminations :
3
hFE Min :
20
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1A, 3.5A
Length :
10.67mm
ECCN Code :
EAR99
Number of Elements :
1
Transistor Type :
NPN
Height :
16.51mm
Width :
4.83mm
JESD-609 Code :
e3
Element Configuration :
Single
Polarity/Channel Type :
NPN
Weight :
1.8g
Transistor Element Material :
SILICON
Emitter Base Voltage (VEBO) :
14V
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
1.05kV
Collector Emitter Saturation Voltage :
1.5V
Transistor Application :
SWITCHING
Current Rating :
5A
Mounting Type :
Through Hole
Power Dissipation :
75W
Mount :
Through Hole
Terminal Finish :
Tin (Sn)
Max Collector Current :
5A
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 800mA 3V
Package / Case :
TO-220-3
Published :
2011
Packaging :
Tube
Factory Lead Time :
14 Weeks
Radiation Hardening :
No
Introducing Transistors - Bipolar (BJT) - Single Fairchild Semiconductor FJP5555TU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, FJP5555TU pinout, FJP5555TU datasheet PDF, FJP5555TU amp .Beyond Transistors - Bipolar (BJT) - Single Fairchild Semiconductor FJP5555TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FJP5555TU


NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP5555TU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 800mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 3.5A.The emitter base voltage can be kept at 14V for high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

FJP5555TU Features


the DC current gain for this device is 20 @ 800mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 14V
the current rating of this device is 5A


FJP5555TU Applications


There are a lot of ON Semiconductor
FJP5555TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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