FJP5021RVTU
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- Mfr.Part #
- FJP5021RVTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 500V 5A TO220-3
- Stock
- 16,679
- In Stock ：
- 16,679
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 18MHz
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Base Part Number :
- FJP5021
- Packaging :
- Tube
- Power - Max :
- 50W
- Supplier Device Package :
- TO-220-3
- Current - Collector (Ic) (Max) :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 600mA, 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 600mA 5V
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 500V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Datasheets
- FJP5021RVTU
NPN 150°C TJ 10μA ICBO TO-220-3 Tube Through Hole
FJP5021RVTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 600mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 600mA, 3A.The product comes in the supplier device package of TO-220-3.A 500V maximal voltage - Collector Emitter Breakdown is present in the device.
FJP5021RVTU Features
the DC current gain for this device is 15 @ 600mA 5V
the vce saturation(Max) is 1V @ 600mA, 3A
the supplier device package of TO-220-3
FJP5021RVTU Applications
There are a lot of ON Semiconductor
FJP5021RVTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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