FJP5021
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- Mfr.Part #
- FJP5021
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 500V 5A TO220-3
- Stock
- 7,702
- In Stock ：
- 7,702
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 600mA, 3A
- Base Part Number :
- FJP5021
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 600mA 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 500V
- Current - Collector (Ic) (Max) :
- 5A
- Package / Case :
- TO-220-3
- Frequency - Transition :
- 18MHz
- Supplier Device Package :
- TO-220-3
- Packaging :
- Bulk
- Power - Max :
- 50W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Datasheets
- FJP5021
NPN 150°C TJ 10μA ICBO TO-220-3 Bulk Through Hole
FJP5021Y Overview
In this device, the DC current gain is 30 @ 600mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 600mA, 3A.Supplier device package TO-220-3 comes with the product.The device exhibits a collector-emitter breakdown at 500V.
FJP5021Y Features
the DC current gain for this device is 30 @ 600mA 5V
the vce saturation(Max) is 1V @ 600mA, 3A
the supplier device package of TO-220-3
FJP5021Y Applications
There are a lot of ON Semiconductor
FJP5021Y applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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