FJP5027RHTU
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- Mfr.Part #
- FJP5027RHTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 3A TO220-3
- Stock
- 10,847
- In Stock ：
- 10,847
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 15MHz
- Power - Max :
- 50W
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 800V
- Base Part Number :
- FJP5027
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 200mA 5V
- Current - Collector (Ic) (Max) :
- 3A
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Datasheets
- FJP5027RHTU
NPN 150°C TJ 10μA ICBO TO-220-3 Tube Through Hole
FJP5027RHTU Overview
This device has a DC current gain of 15 @ 200mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 800V maximal voltage is present.
FJP5027RHTU Features
the DC current gain for this device is 15 @ 200mA 5V
the vce saturation(Max) is 2V @ 300mA, 1.5A
FJP5027RHTU Applications
There are a lot of ON Semiconductor
FJP5027RHTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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