FJP5021RTU
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- Mfr.Part #
- FJP5021RTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 500V 5A TO220-3
- Stock
- 39,931
- In Stock ：
- 39,931
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Base Part Number :
- FJP5021
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 600mA 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 500V
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Frequency - Transition :
- 18MHz
- Package / Case :
- TO-220-3
- Power - Max :
- 50W
- Supplier Device Package :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 600mA, 3A
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FJP5021RTU
NPN 150°C TJ 10μA ICBO TO-220-3 Tube Through Hole
FJP5021RTU Overview
In this device, the DC current gain is 15 @ 600mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 600mA, 3A.Product comes in the supplier's device package TO-220-3.There is a 500V maximal voltage in the device due to collector-emitter breakdown.
FJP5021RTU Features
the DC current gain for this device is 15 @ 600mA 5V
the vce saturation(Max) is 1V @ 600mA, 3A
the supplier device package of TO-220-3
FJP5021RTU Applications
There are a lot of ON Semiconductor
FJP5021RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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