FJP5021RV
- Mfr.Part #
- FJP5021RV
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 500V 5A TO220-3
- Stock
- 46,503
- In Stock :
- 46,503
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-220-3
- Base Part Number :
- FJP5021
- Voltage - Collector Emitter Breakdown (Max) :
- 500V
- Supplier Device Package :
- TO-220-3
- Frequency - Transition :
- 18MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 600mA, 3A
- Power - Max :
- 50W
- Current - Collector (Ic) (Max) :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 600mA 5V
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Datasheets
- FJP5021RV

NPN 150°C TJ 10μA ICBO TO-220-3 Bulk Through Hole
FJP5021RV Overview
This device has a DC current gain of 15 @ 600mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 600mA, 3A means Ic has reached its maximum value(saturated).Product package TO-220-3 comes from the supplier.Collector Emitter Breakdown occurs at 500VV - Maximum voltage.
FJP5021RV Features
the DC current gain for this device is 15 @ 600mA 5V
the vce saturation(Max) is 1V @ 600mA, 3A
the supplier device package of TO-220-3
FJP5021RV Applications
There are a lot of ON Semiconductor
FJP5021RV applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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